High voltage ultrafast diode datasheet production data features low forward voltage drop high reliability high surge current capability soft switching for reduced emi disturbances planar technology description this device is an ultrafast diode based on a high voltage planar technology, it is perfectly suited for. No licence is granted for the use of it other than for information purposes in connection with the products to. With a high unity gain frequency and a specified 0. Bc817 16bc81725bc817 40 smd general purpose transistor npn. Replacement and equivalent transistor for the pmbt2907a you can replace the pmbt2907a with the fmmt2907a, fmmt2907ar, fmmt591, fmmt591q, kn2907as, kst2907a, ktn2907as, mmbt2907a, mmbt4354, mmbt4355 or pmst2907a. High voltage ultrafast diode datasheet production data features low forward voltage drop high reliability high surge current capability soft switching for reduced emi disturbances planar technology description this device is an ultrafast diode based on a high voltage planar technology, it. V ref cathode anode precision adjustable shunt voltage reference description features the gp431 is a threeterminal adjustable shunt voltage regulator with specified thermal stability. Marking of electronic components, smd codes a7, a7, a7, a7.
Characteristic symbol min typ max unit test condition off characteristics note 7 drainsource breakdown voltage bv dss 60 v 0v, iv gs d 10a zero gate voltage drain current i dss 1. This datasheet contains the design specifications for. Get same day shipping, find new products every month, and feel confident with our low price guarantee. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. Acz bc817 16bc81725bc817 40 smd general purpose transistor npn. Unit conditions vbrceo collectoremitter breakdown voltage 45. H945 datasheet, equivalent, cross reference search. Characteristic symbol min max unit test condition reverse breakdown voltage note 7 v brr 75 v i r 2. Pnp switching transistor in a sot23 to236ab small surface mounted device smd plastic package. Lm321 low power single operational amplifier datasheet. Smd datasheet, smd pdf, smd data sheet, smd manual, smd pdf, smd, datenblatt, electronics smd, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets.
Bav99 200 ma 70 v high conductance ultrafast switching diode. Pmbt2907a pnp smd sot23 transistor complementary npn. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Storage temperature range tstg55 to 150 electrical characteristics type number symbol minimum maximum units reverse breakdown voltage ir 100 a vr 75 v forward voltage if 1. Page 2 of 5 electrical characteristics t ambient25. E absolute maximum rating ta25c, unless otherwise specified. A8a datasheet bias resistor transistor, npn silicon surface. Operating and storage temperature range tj,tstg ifsm 50 v. Baw56, bav70, bav99 225mw smd switching diode spiratronics. Transistor ra7 sra2207sf sot23f transistor a7 tc10145.
H945 applications the h945 is designed for driver stage of af amplifier and low speed switching. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. Smd general purpose transistor pnp smd general purpose transistor pnp features pnp silicon epitaxial planar transistor for switching and amplifier applications rohs compliance mechanical data case. Lm321 low power single operational amplifier datasheet rev. Apps enter a full or partial smd code with a minimum of 1 letters or numbers code.
Marking of electronic components, smd codes 1b, 1b, 1b18. Specifications may change in any manner without notice. Parameter symbol ratings unit collectorbase voltage vcbo30 v collectoremitter voltage vceo20 v emitterbase voltage vebo5 v collector current ic700 ma. Mmbt2907a datasheetpdf 1 page taitron components incorporated. Lm321 low power single operational amplifier 1 features 3 description the lm321 brings performance and economy to low 1 vcc 5 v, ta 25c.
We make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free from errors or omission. Bs170d bs170 small signal mosfet 500 ma, 60 volts n. A7w smd transistor datasheet pdf small signal diode. C unless noted otherwise off characteristics symbol description min. Absolute maximum ratings ta 25c unless otherwise noted.
The bav99 is a 350 mw highspeed switching diode array with seriespair diode configuration. These ratings are limiting values above which the serviceability of any. Npn s i l i c o n t r a n s i s t o r shantou huashan electronic devices co. Bav99a7w datasheet, bav99a7w pdf, bav99a7w data sheet, bav99a7w manual, bav99a7w pdf, bav99a7w, datenblatt, electronics bav99a7w, alldatasheet, free, datasheet. A6t smd databook electronic circuits, tv schematics, audio. Marking of electronic components, smd codes a4, a4, a4. The output voltage can be adjusted to any value between v ref and 36v by using two external resistors. Dual series schottky barrier diodes these schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Marking of electronic components, smd codes a7, a7, a7. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. A7w bav99 transistor bav99 a7w from transistors supplier or manufacturershenzhen cxcw electronic co.
Sep 22, 2019 2sb546a datasheet pdf 2sba transistor datasheet pdf, 2sba equivalent. Extremely low forward voltage reduces conduction loss. This new series of digital transistors is designed to replace a single device and its external resistor bias network. The complementary npn transistor to the pmbt2907a is the pmbt2222a. Unit conditions vbrceo collectoremitter breakdown voltage 45 v ic10ma, b0.
Free device maximum ratings rating symbol value unit drain. Smd code package device name manufacturer data datasheet. Baw56, bav70, bav99 225mw smd switching diode small signal diode electrical characteristics rating at 25c ambient temperature unless otherwise specified. Absolute maximum ratings are those values beyond which damage to the device may occur. Smd general purpose transistor npn bc81716bc81725bc81740. Pnp transistor for general purpose and switching applications. Npn silicon surface mount transistor with monolithic bias resistor network. This data sheet and its contents the information belong to the. A6a smd databook electronic circuits, tv schematics, audio. A8a bias resistor transistor, npn silicon surface mount transistor with monolithic bias resistor network. Bc846bc847bc848 smd general purpose transistor npn.
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